EXTRACTION OF ON-BOARD TRM HIGH-POWER MICROWAVE HEMT PARAMETERS
Abstract
Analytical nonlinear model of high-power microwave HEMT with parallel resonance circuits was designed. Extraction method of high-power HEMT parameters without optimization usage was proposed and described. Test board for high-power HEMT measurement for 0.5 - 20 GHz frequency band was designed. Reliability of the proposed method and nonlinear model is confirmed by experimental data.
References
1. Малахов Р.Ю., Добычина Е.М. Мощные транзисторы для бортовых радиолокационных систем // Научный Вестник МГТУ ГА. - 2012. - № 12 (186). - С.
2. - 190.
3. Torres-Rios E., Saavedra C. A new compact nonlinear model improvement methodology for GaN-HEMT, 2014 IEEE 5th Latin American Symposium on Circuits and Systems (LASCAS), Santiago, 2014. Рp. 1 - 4.
4. Marcoux N.L., Fisher C.J., White D., Lachapelle J., Palacios T., Saadat O., Sonkusale S. A new GaN HEMT nonlinear model for evaluation and design of 1-2 watt power amplifiers, 2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS), Boise, 2012. Рp.
5. - 56.
6. Chang C., Di Giacomo-Brunel V., Floriot D., Grunenputt J., Hosch M., Blanck H. Nonlinear transistor modeling for industrial 0.25-µm AlGaN-GaN HEMTs, 2013 European Microwave Conference (EuMC), Nuremberg, 2013. Рp. 1471 - 1474.
7. Dambrine G., Cappy A., Heliodore F., Playez E. A new method for Determining the FET small-signal equivalent circuit, IEEE Transactions on Microwave Theory and Techniques, vol. 36, № 7, 1988. Рp. 1151-1159.
Review
For citations:
Malakhov R.Yu. EXTRACTION OF ON-BOARD TRM HIGH-POWER MICROWAVE HEMT PARAMETERS. Civil Aviation High Technologies. 2014;(209):136-144. (In Russ.)